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A highly efficient three-level class-G modulated RF power amplifier (PA) is presented. The PA is designed to operate as downlink amplifier in the 1800–1900 MHz LTE-band. At 1.85 GHz the maximum output power under continuous wave excitation is 48.2 dBm (66 W). The system achieves an overall efficiency of more than 50% when amplifying a 20 MHz OFDM signal with 9 dB peak-to-average power ratio at 40...
The linearization of a discrete level supply modulated RF power amplifier using digital predistortion (DPD) is investigated. The characteristics of the system are evaluated and a novel DPD model, capable of handling the switching dynamics of the system, is developed and presented. The model is tested for an RF power amplifier operating at 2.65 GHz with a 16 MHz modulated signal. It is shown that modeling...
A two-level class-G RF power amplifier system is analyzed. Measurements show that for low output powers there is an optimum switching threshold valid for both PAE and linearity while for higher output powers they diverge and there is a trade-off between PAE and linearity. This creates a region where the output power can be reduced from maximum to 2 dB (58%) back-off in which the PAE and linearity...
In this paper, the influence of channel frequency in the RF-band on digital predistortion (DPD) is investigated empirically. A class-AB GaN-HEMT power amplifier targeting the 3.5 GHz band for WiMAX is used with a 20 MHz OFDM signal. It is found that frequency dependent memory effects in the band have a strong impact on the amount of memory taps needed for the DPD predistorter model. The overall characteristic...
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