The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The paper considers a new electric diagram of the microelectronic self-excited oscillator based on the bipolar transistor structure with negative resistance. The oscillator operates in oscillatory and relaxation modes. Chaotic mode of the self-excited oscillator was provided by installing additional components into a basic circuit. Results of the deterministic chaos microelectronic oscillator simulation...
In the paper a deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance is proposed and examined. A modified mathematical model of Anishchenko-Astakhov is proposed for describing the chaotic oscillation dynamics. The results of mathematical modelling and experimental research are obtained.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.