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With silicon carbide (SiC) MOSFETs becoming commercial available, high switching frequency is a prevailing trend to increase the power density and efficiency in power converters. Nevertheless, the device performance is critically determined by the values of parasitic inductances, where negative effects such as switching oscillations are usually presented. It is more likely troublesome for power modules...
Parasitic inductances of IGBT power modules have a major influence in device operation and circuit performance. They often incur negative effects such as switching oscillations, EMI, extra power losses and stress on the devices. This paper proposes a technique to extract parasitic inductances of IGBT power modules based on two-port scattering (S) parameter measurement. Accurate values of the internal...
This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement using two-port vector network analyzer. The method is validated through case studies of 1200V SiC MOSFET in TO-247 and 30V silicon trench MOSFET in SO-8 package.
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