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Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F− doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously...
This letter demonstrates an integration process of in situ Cl− doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl− doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl− doped Al2O3 is higher than the pure...
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