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A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5 V. The gate leakage current is 50 pA and 20 pA at forward gate bias of Vgs=10 V and reverse gate bias of Vgs=-10 V, respectively. Maximum value of...
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