The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper shows the circuit level performance comparison of low-κ and high-κ spacer Junctionless FinFET(J-FinFET). TCAD simulations show that for high-κ (HfO2, κ=22) spacer J-FinFET, the device performance parameters such as DIBL (drain induced barrier lowering), SS (sub-threshold swing) and ION/IOFF improved by 14.5 %, 5% and 3.5x respectively as compared to low-κ (SiO2, κ=3.9) spacer J-FinFET....
A novel technique that combines complementary dual rail logic and guard gate, referred to as Guarded Dual Rail Logic (GDRL) to mitigate single event effects is proposed in this paper. TCAD simulations have been done to validate the SET filtering properties of guard gate in 65nm technology for LET values up to 100MeV-cm2/mg. To compare proposed GDRL design with TMR, we have used ISCAS benchmark circuits...
We propose a novel short and deep drain (SDD) MOSFET structure and SDD based circuits that are suitable for space applications. The 3-D TCAD simulations for heavy ion radiation with LET of 10 MeV-cm2/mg have been carried out on both SDD MOSFET and SDD inverter. From TCAD simulations, we observe that SET magnitude in SDD inverter is reduced by 43% by using shorter drain and by 17% by using deeper drain...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.