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The Eu-doped GaN thin films (GaN:Eu) were deposited on the c plane of sapphire substrate by the radio frequency magnetron sputtering method. As a target, the GaN compound powder target was used, which contains small amount of EuN powder of 1, 2 and 5mol%. X-ray diffraction (XRD) and high resolution photoluminescence spectra (PL) of GaN:Eu films were studied with respect to the substrate temperature...
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