The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a new ultra-thin body and BOX (UT2B) fully-depleted (FD) silicon-on-insulator (SOI) device architecture based on a stacked back plane (BP) and WELL below the BOX is presented. The proposed device has been developed to boost the gate-to-channel electrostatic control and to be compatible with the adaptive body biasing (ABB) techniques for low power applications. The concept viability...
This work presents TCAD simulations of NOR NC memories performed with commercial tools, which allow for a good understanding of the impact of the localized charge on both electrostatics and dynamics of the cell. The key role of the position of the trapped charges along the channel length on the threshold voltage shift has been put in evidence. Indeed, this result is critical for NOR discrete-trap...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.