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We report an original Dual Strained Channel On Insulator (DSCOI) Fully Depleted CMOS architecture by co-integrating nFETs on sSOI and pFETs on Si/c-SiGe/(s)SOI with a TiN/HfO 2 gate stack (EOT=1.15nm) and down to 40nm gate lengths. We demonstrate for the first time large gains for transconductance (up to +125%) and mobility (+100%) even for short channel pFETs. This enables us to improve the...
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