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We report an original Dual Channel-On-Insulator (DCOI) Fully Depleted CMOS architecture by co-integrating nFETs on sSOI and pFETs on Si/SiGe/(s)SOI with a TiN/HfO2 gate stack (EOT=1.15 nm) and down to 40 nm gate lengths. We demonstrate for the first time large gains for transconductance (up to +125%) and mobility (+100%) even for short channel pFETs. This enables us to improve the ON(OFF) pFETs trade-off...
Sources responsible for local and inter-die threshold voltage (Vt) variability in undoped ultra-thin FDSOI MOSFETs with a high-k/metal gate stack are experimentally discriminated for the first time. Charges in the gate dielectric and/or TiN gate workfunction fluctuations are determined as major contributors to the local Vt variability and it is found that SOI thickness (TSi) variations have a negligible...
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