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In this paper, we present a deep investigation of ultra-scaled Finflash memories, fabricated on Silicon on Insulator (SOI) substrate, with Silicon NanoCrystal (Si-NC) or nitride layers acting as storage nodes. Electrical characteristics of devices with channel length (LG) as short as 30 nm, and fin width (WFIN) as narrow as 10 nm are shown. Effective Channel Hot Electron (CHE) writing with sub-3.2...
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