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Photoinduced properties of Ba0.99La0.01SnO3/p‐Si heterojunctions that exhibit rectifying characteristic have been investigated. It is found that the heterojunction shows particular photoinduced characteristics at reverse bias when illuminated by violet or green light. The photocurrent rises rapidly with reverse bias but saturates beyond a critical voltage under green light illumination, whereas the...
Resistive memory switching was investigated in titanates and niobates of the type AnBnO3n+2 and in the high‐Tc superconductor Bi2Sr2CaCu2O8+δ. We studied the switching by current injection perpendicular to the layers. Both dc and pulsed measurements were performed. Out‐of‐plane transport properties were investigated by measurements of the resistance and current–voltage characteristics (IVs) vs. temperature...
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