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A self-assembled InGaSb quantum dot (QD) structure as a nano-structured Sb-based compound structure is fabricated on a silicon substrate using a solid-state molecular beam epitaxy (MBE). A small (dimensions of less than a few tenths of a nanometer) and high-density (>10 10 /cm 2 ) InGaSb QD structure can be obtained on a Si wafer surface under optimal growth conditions at a low...
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