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In this work the effects of filling the surface energy states in AlGaAs/GaAs heterostructures on the depletion layer are reported. The depletion layer width was varied from 49 to 10nm as determined by Raman spectroscopy, allowing to discern their effect on the generation of Franz-Keldysh oscillations observed by photoreflectance spectroscopy. It is found that the photoreflectance modulation process...
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