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Silicon optics with broadband antireflective (AR) treatments are being developed for millimeter and submillimeter-wave applications. Combined photolithography and deep reactive ion etching (DRIE) techniques are used to texture the surfaces of high resistivity, low loss silicon wafers. We report on the design, fabrication, and testing at 250 GHz of single and double layer AR treatments on silicon optics.
Millimeter- and submillimeter-wave imaging systems for astronomy, planetary, and Earth science applications are increasingly moving towards large focal plane arrays. The relatively long wavelengths together with focal ratios encountered imply mm-sized pixels, and when one considers arrays with a hundred to thousands of pixels, we have to deal with optical elements of quite substantial size. In many...
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