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A compact model for power devices with advanced technology is developed which considers the geometry dependent potential distribution along the device explicitly. The model solves key potential nodes within the device iteratively to realize accurate modeling of the underlap, which occurs in HV\MOSFETs, as well as of the non-monotonous potential-distribution region. With use of the developed model...
This paper summarizes investigations for the carrier-trapping influence on electric characteristics of MOSFETs. Particular focus is given on the transient characteristics, which is affected by the time constant of the carrier trapping during the device operation. For the purpose a compact model has been developed for circuit simulation by considering the dynamic trap/detrap feature in the framework...
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