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A ridge waveguide structure was prepared on a z-cut LiNbO 3 crystal wafer by a combined process of ion implantation and precise dicing. The single-crystal LiNbO 3 was implanted at room temperature using 3MeV oxygen ions at a fluence of 5×10 14 ions/cm 2 . After annealing to 200°C, ridge structures were formed on the wafer surface by precise diamond blade dicing. Two...
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