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In this study, titanium (Ti)-doped zinc oxide thin film transistors (TiZO TFTs) with a double-layer gate dielectric were successfully fabricated on glass at low temperature. A stacked 7 nm-thick Al2O3/180 nm-thick SiO2 dielectric layer was used to improve the electrical performance of the TFTs, especially their leakage characteristics. Compared with the SiO2 single dielectric, the devices with the...
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