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In this work, we present our approach towards the growth of active regions and cladding layers for GaSb based record low-threshold lasers emitting in the range of 2.5–2.7μm. First, a study on Sb incorporation in the AlGaAsSb cladding layers and GaInAsSb QWs is presented as a function of growth temperature. A linear decrease in Sb incorporation was observed for both cases. Second, a choice of well-barrier...
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