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We present a comprehensive device and scalability validation of STT-MRAM for high performance applications in sub-10 nm CMOS by providing the first statistical account of barrier reliability in perpendicular magnetic tunnel junctions (pMTJs) from 70 to 25 nm diameter in 1 Gbit arrays. We have experimentally investigated the time-dependent dielectric breakdown (TDDB) properties and the dependence of...
A two-dimensional ferromagnet is an interesting system both for basic understanding of magnetism and for spintronic applications. However, making such a system is not easy as ferromagnetism becomes more and more unstable with reducing the thickness of a ferromagnet. For example, in oxide systems such as SrRuO3, La1−xSrxMnO3, etc, ferromagnetism is lost around the thickness of a few unit cells [1,...
Bias temperature instability of TiN/HfOx/Pt resistive random access memory (ReRAM) device is investigated in this work for the first time. As temperature increases (up to 100°C in this work), it is observed that: (1) leakage current at high resistance state (HRS) increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a...
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