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A metallic-target reactive co-sputtering technology is used to fabricate zinc tin oxide (ZTO) thin-film transistors (TFTs). The effect of the O2/(Ar+O2) flow rate ratio on the performance of the resulting TFTs is investigated in detail. It is found that an O2/(Ar+O2) ratio of 11%–12% produces devices with the best performance, including a linear mobility of 8.6 cm2/Vs, subthreshold swing of 0.36 V/decade,...
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