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Wide-bandgap materials, particularly Gallium Nitride, have emerged as the platform underlying many of the most promising technologies in the high-power and high-frequency domain. However, GaN p-channel devices lag far behind their popular n-channel counterparts, due to lower mobilities as well as difficulties in doping and forming ohmic contacts. There is a strong need for wide-bandgap p-channel FETs...
Recently, Ga2O3 has become an attractive material for both power electronic and optoelectronic device applications since large-size electronic-grade Ga2O3 substrates can be readily produced by melt-grown methods. Furthermore, high quality epitaxy and n-type doping schemes have been demonstrated [1, 2]. Due to its ultra-wide band gap (∼4.5–4.9 eV), Ga2O3 is estimated to have a critical breakdown field...
GaN MOSHEMT or MOSFET on top of conducting (drift layer and drain electrode) layers is a building block for vertical GaN VDMOS power transistors. GaN MOSHEMTs incorporating a polarization-doped p-AlGaN layer as the back barrier on top of conducting layers is named as PolarMOSH. In this work, we present a comparative study of PolarMOSH fabricated on SiC and free-standing GaN substrates. PolarMOSH wafers...
The III-nitride wide bandgap semiconductors show attractive and compelling potential for power electronics due to their high breakdown electric field (Ebr) as well as high carrier mobilities (μ). Previous efforts have realized GaN high power p-n diodes by traditional acceptor-donor doping.[2–4] The new polarization-induced doping technique using graded AlGaN heterostructures can improve the doping...
Owing to the large breakdown electric field (Eb), wide bandgap semiconductors (WBGs) such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the area specific-on resistance (Ron,sp) and breakdown voltage (BV) is often employed to compare the performance limitation among various materials. The...
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