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We demonstrated Silicon on Thin Buried oxide (SOTB) CMOS especially designed for ultralow-voltage (ULV) operation down to 0.4 V for the first time. Utilizing i) dual-poly gate stack with high-k having quarter-gap work functions best for the ULV CMOS operation, and ii) a novel “local ground plane (LGP)” structure that significantly improves short-channel effect (Vth roll off) without increasing local...
Randomness of discrete fixed charges at SiO2/Si interface of NMOS, which is thought to be one of the possible origins of threshold voltage (Vth) variation, is investigated using 3D device simulation. Three cases of fixed charge types are assumed; (i) both negative and positive sheet charges exist with zero net charge (mix charges), (ii) only negative sheet charges exist, and (iii) only positive sheet...
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