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For the first time, we propose a one transistor nonvolatile memory which can solve the long time charge loss issue incurred in the conventional nitride-storage cell, a hurdle to the scaling of SONOS memory. The SONOS cell uses charge as the storage, while the new invention discloses a cell with one transistor and the gate connected to a simple MIM structure. The readout is from the transistor's Vth...
For the first time, we propose a one transistor resistance-gate nonvolatile memory (RG-NVM) which comprises a simple MIM structure on top of the transistor gate while readout is taken from the transistor Vth or Id, similar to that of flash memory. A bilayer MIM is preferable for quality performance. The program/erase operation of the memory is made by the edge-tunneling between source/drain and the...
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