The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Self-heating in gallium nitride based high frequency, high electron mobility power transistors (GaN HEMTs) is inspected using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging. The two methods provide complementary temperature information inside the semiconductor and on top metal layers of the GaN HEMT. Self heating is measured under both steady-state and ultra-fast pulsed...
Precise temperature knowledge is a key parameter to estimate the performances and predict the reliability of semiconductor devices. As a direct temperature measurement within a channel is most of the time not achievable, a common approach is to measure the device surface temperature and then to use simulations to estimate the channel temperature. In this paper, we propose to evaluate the interests...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.