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In this work, we present a systematic study of the surface recombination velocity of boron-diffused Si wafer passivated with plasma-enhanced chemical-vapor-deposited (PECVD) AlO x layers. Saturation current densities in the range of 5.2–38fAcm −2 (at 300K) were achieved on planar surfaces. In particular, we present an industrially relevant boron emitter, allowing for about 700mV open...
We report on the development of a laser doping process for the formation of a local back surface field (LBSF) for n-type silicon solar cells. Local point contacts are formed by applying a laser process to a doped, passivating layer of amorphous silicon carbide (PassDop layer). The exposure to laser radiation results in local doping and opening of the passivation layer at the same time. By variation...
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