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This paper studies the Hall mobility of Hall structures integrated in two CMOS technological processes, regular bulk and Silicon on Insulator respectively. The main character of this study is the Basic Hall cell, for which accurate dimensions (length and width of the active region, electrical contacts size and area of the p-substrate) are given. To this purpose, three-dimensional physical models are...
In this paper a gradual investigation of a particular Hall sensor in SOI (“Silicon-On-Insulator”) technology is presented. The most important parameters of a specific Hall cell, based on SOI structure, are evaluated through three-dimensional physical simulations. The fact that the depth of the active silicon layer in SOI integration process is much smaller than in a regular CMOS is immediately reflected...
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