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1200 V SiC MOSFET is a viable alternative for state of the art Si IGBTs due to its superior switching performances. However, high di/dt and dv/dt during the switching transients worsen the switching performance of the SiC MOSFET due to the presence of parasitic inductances in the inverter layout. They cause undesired overshoot and oscillations in the device voltage and current. They also increase...
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