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Ultraviolet (UV) detection is important in astronomy, combustion detections and medical analysis. Solid-state UV detectors based on wide band gap semiconductors, such as 4H-SiC, are widely studied because of their excellent electrical properties [1]. 4H-SiC based UV detectors are solar blind and can be applied in extremely high temperature environments [2]. However, the state-of-art 4H-SiC photodetectors...
The p-i-n ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and characterized from room temperature (RT) to 550 °C. Due to bandgap narrowing at higher temperatures, the photocurrent of the photodiode increases by 9 times at 365 nm and reduces by 2.6 times at 275 nm from RT to 550 °C. Moreover, a 4H-SiC p-i-n photodiode array has been fabricated. Each column and row of the array is...
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