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The defect structure of GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) depends on the growth temperature and thickness of the aluminum nitride (AlN) buffer layer. High-resolution X-ray diffraction was used to measure symmetric (0002) and asymmetric (101¯2) rocking curve (ω-scans) broadening, which allowed the estimation of screw threading dislocation (TD) and edge TD...
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