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A finite element model which includes electromigration, thermomigration, stress migration and concentration diffusion is established to study the mass diffusion phenomenon. Numerical experiment is carried out to obtain the electrical, thermal, stress and atomic concentration fields of the sweat and through silicon via (TSV) structure under high current density load. The effectiveness of the electromigration...
This paper proposes a new prediction method for electromigration (EM) induced void generation of solder bumps in a wafer level chip scale package. The methodology is developed based on discretized weighted residual method in a user-defined finite element analysis framework to solve the local ME governing equation with the variable of atomic concentration. The local solution of atomic concentration...
This paper proposes a new prediction method for electromigration induced void generation of solder bumps in a wafer level chip scale package (WL-CSP). The methodology is developed based on discretized residual weight method (RWM) in a user-defined finite element analysis (FEA) framework to solve the local electromigration governing equation with the variable of atomic concentration. The local solution...
This paper proposes a parametric simulation plan for UBM geometry with different UBM rim angles, diameters and thicknesses. The parameter plan for the solder bump with different heights and diameters, and different shapes is also investigated. The goal of this study is to understand the impact of the die shrinkage on solder joint reliability under electromigration failure, and to optimize the UBM...
An enhanced finite element modeling methodology based on commercial software ANSYS Multi-physics and FORTRAN code is developed for the simulation of electromigration. The electronic migration formulation taking into account the effects of the atomic concentration gradient (ACG) has been developed to show the difference in the electromigration (EM) failure mechanisms. An improved algorithm of total...
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