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Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low‐temperature processing for ultrahigh‐density data storage. Here, an ultrathin two‐terminal n‐p‐n...
A fundamental limit for the supply voltage of conventional field‐effect transistors is the long high‐energy tail of the Boltzmann distribution of the carrier population at the source junction, which requires a gate voltage at least 60 mV to change one decade of current. Here 2D semiconductors are adopted as channel materials and hafnium zirconium oxide (HZO) as negative capacitance (NC) gate stack...
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