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We report on our recent results of terahertz oscillators with resonant tunneling diodes (RTDs) at room temperature. By a structure with high current density and small capacitance, a fundamental oscillation at 831 GHz was obtained in GaInAs/AlAs double-barrier RTDs integrated with slot antennas. A comparison with theoretical analysis shows a possibility of electron transition from the Γ to L bands...
A fundamental oscillation up to 915 GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (ap0.63 mum2) and a low available current density (ap3 mA/mum2) which is...
We report experimental and theoretical results on the increase in output power of resonant tunneling diode (RTD) oscillators in sub-terahertz (THz) range with an offset-fed slot antenna and high current density. Theoretical analysis shows that the oscillation frequency increases with an offset from the center of the slot antenna. Output power also increases with the offset up to the point of the best...
This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of ultra-thin InAlP/InGaAs heterojunctions for use as wet-etching stoppers in InP-based high electron mobility transistors (HEMTs) and as barriers in resonant tunneling diodes (RTDs). InAlP/InGaAs modulation-doped (MD) heterojunctions with high electron mobility were successfully grown. Practical wet-etching selectivity in even...
A fundamental oscillation of up to 831 GHz was observed at room temperature in GaInAs/AlAs resonant tunneling diodes integrated with planar slot antennas. The thickness of the collector spacer layer was optimized (20 nm) and the mesa area (<1 mum2) was reduced in order to reduce the resonant tunneling diode capacitance. Reduction in the negative differential conductance in the small mesa area was...
We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum2 with the peak/valley current ratio of 1.5 was obtained for 1.4-nm-thick barrier and emitter doping concentration of 6 times 1018cm-3. By these characteristics, oscillators with the fundamental oscillation exceeding...
We observed coherent power combination in 3- and 6-element oscillator array using resonant tunneling diodes coupled through planar circuits in sub-THz range. InGaAs/AlAs resonant tunneling diode oscillators with slot antennas are arranged collinearly on the same InP wafer, and coupled with each other through a metal-insulator-metal stub structure. In 3-element array, a single peak at 293 GHz with...
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