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This paper focuses on multi-tone characterization of baseband (IF) electrical memory effects and their reduction through the application of complex-signal, active baseband load-pull. This system has been implemented to allow the precise evaluation of intrinsic nonlinearity in high-power microwave devices for wideband applications. The developed active baseband load-pull capability allows a constant,...
This paper focuses on multi-tone characterization of baseband (IF) electrical memory effects and their reduction through the application of complex-signal, active baseband load-pull. This system has been implemented to allow the precise evaluation of intrinsic nonlinearity in high-power microwave devices for wideband applications. The developed active baseband load-pull capability allows a constant,...
This paper demonstrates how the linearity performance of a 10W GaN HEMT can be dramatically improved by actively engineering the baseband impedance environment around the device. An important refinement to existing active load-pull measurement capability is proposed that allows the precise and independent control of all significant baseband and RF components that result from the amplification of a...
The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when...
This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics...
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