The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate an image sensor pixel with dual-layer metal grid polarizer with extinction ratio over 80 in 65-nm standard CMOS technology. By recent advanced CMOS technology, it is feasible to design sub-wavelength metal layer patterns in the visible wavelengths. Fine metal grid has high polarization characteristics. Its extinction ratio depends on the grid pitch. Thus, high extinction ratio can be...
In this paper, we demonstrate a CMOS image sensor with high extinction ratio on-chip polarizers with 65-nm standard CMOS technology. The polarizer is based on a metal wire grid fabricated with the metal wiring layers. The extinction ratio of 11.0 dB is achieved by a pixel with on-chip polarizer where the line / space widths are 90 nm / 90 nm.
We demonstrate complementary metal-oxide-semiconductor (CMOS) image sensor pixels with on-chip polarizer fabricated by a standard 65-nm CMOS technology. The extinction ratio of 94 at a wavelength of 750 nm was achieved.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.