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Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.
Pt/Cr-doped SrZrO3/SrRuO3 metal-oxide-metal (MOM) structures were fabricated by off-axis rf sputtering for nonvolatile memory applications. The MOM structures showed reproducible and bistable resistive switching behaviors. From the low-temperature I-V measurements, it was found that the low-resistance state (LRS) was governed by ohmic conduction. In addition, the characteristics of LRS were influenced...
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