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This paper proposes an improved switching loss model for a 650V enhancement-mode gallium nitride (GaN) transistor. The interpolation fitting method is used to fit the strong nonlinear capacitance and transconductance, and it shows a better accuracy than the given function or polynomial fitting method. Meanwhile, because the input capacitance has a strong nonlinear relationship with gate-source voltage...
This paper proposes an improved analytical switching process model to calculate the switching loss of low-voltage enhancement-mode Gallium Nitride high-electron mobility transistors (eGaN HEMTs). The presented eGaN HEMTs models are more or less derived from silicon MOSFETs models, whereas eGaN HEMTs are different from three aspects: higher switching speed, much more reduced parasitic inductance in...
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