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An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N2-dominant-gas annealing process was effective for improving the ferroelectricity...
First, fabrication and characterization of a NAND flash memory using novel memory cells of ferroelectric-gate field-effect transistors (FeFETs), which is named Fe-NAND, was reviewed. A 64 kb Fe-NAND memory cell array with bit-line- and block- selector circuits was produced and characterized. Several standard operations for a NAND flash memory were demonstrated. All-cell-erase, all-cell-program, and...
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