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3D WLCSP using via last TSV (through silicon via) technology is an ideal packaging technology to meet small-form-factor, high I/O density, high-speed and most important, lower cost. For thin 3D WLCSP with TSVs, a number of critical processes need to be developed such as oxide etch, via cleaning and wafer de-bonding. In the present paper, processes for 8 inch, thin WLCSP with TSV diameter of 40µm and...
In this paper, a convenient wafer level bonding based on un-patterned BCB to achieve all-silicon structures was presented. This method is easy to operate, and can be applied in the multi-wafer bonding. After the BCB was spin-coated on the substrate wafer and soft-baked, no process had been carried out on it. Both the time node of pressure applied to the bonding and the BCB soft-bake process had been...
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