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This work presented the LF noise behavior of nMOS JNTs investigated by experimental results. It was shown that JNTs can present either 1/ƒ or 1/ƒ2 noises, depending on their operation region and the frequency. 1/ƒ noise has been associated to carrier number fluctuations whereas 1/ƒ2 can be related to defects in the depletion layer. The Wmask reduction degrades SId at higher VGT (∼ 1 V) and present...
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