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By characterizing the mobility of Si-face/C-face of SiC graphene before and after stacking the layer of HfO2 with a polyvinyl alcohol (PVA) treatment on the device active layer, we have explored the properties of SiC based epitaxial graphene and the effects of the dielectric film with PVA treatment. Epitaxial graphene grown on the carbon face produces a higher mobility than film grown on the silicon...
The SiC wafers implanted with Al were capped with AlN, C, or AlN and C and were annealed at temperatures as high as 1700°C to examine their ability to act as annealing caps. As shown previously, the AlN film was effective up to 1600°C, as it protected the SiC surface, did not react with it, and could be removed selectively by a KOH etch. However, it evaporated too rapidly at the higher temperatures...
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