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The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (Eeff) changes it's sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between Eeff and carrier distribution. This is the first time, when a predictive mobility model for wide...
Threshold voltage is an important device parameter for MOSFET modeling as circuit designer needs to know the threshold voltage to bias the transistor in the required region of operation. In this paper, we have proposed an approach to calculate the threshold voltage for operating point information in the BSIM-IMG model which is the latest industry standard compact model for FDSOI transistors. The BSIM-IMG...
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