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The influence of the metallization layer geometry on the electrothermal behavior of the multifinger power high-electron mobility transistors (HEMTs) is studied. The analysis of thermal and electrical behavior is supported by effective 3-D electrothermal device simulation method developed for Synopsys TCAD Sentaurus environment using mixed-mode setup. The proposed methodology allows fast simulation...
In this paper we present results of the electrothermal analysis of multifinger power high-electron mobility transistors (HEMTs). The analysis is supported by effective 3-D electrothermal device simulation method developed for Synopsys TCAD Sentaurus environment using mixed-mode setup. The effects of multifinger HEMT structure metallization layout design are studied and described. Simulation results...
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