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We measured terahertz (THz) emission from the vertically aligned indium arsenide (InAs) nanowires using THz time-domain spectroscopy. The photoexcited InAs nanowires were grown by metalorganic chemical vapor deposition on type <111> silicon substrate. Experimental results shows that THz emission mechanism of InAs nanowires are very different from that of bulk InAs substrates.
We present the analysis and measurements of scattering signals of a terahertz pulse scattering-type near-field microscope. We used a self-consistent line dipole image method for the quantitative analysis of the THz near-field interaction. The line scan across a gold film demonstrated that the terahertz miscroscope has a nanoscale resolution of nm. The measurements of scattering...
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