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A Ka-band broadband frequency doubler in a 0.18 µm SiGe BiCMOS technology is presented in this paper. The frequency doubler employs a configuration of a common-base (CB)/ common-emitter (CE) pair to enhance the second harmonic efficiently. This frequency doubler features a conversion gain of higher than ™7 dB with an input power of 5 dBm between 26 and 40 GHz. The maximum output 1-dB compression point...
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