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This paper describes a K-band 2-element phase-array receiver in 90 nm CMOS process. The receiver consists of two low noise amplifiers (LNAs), two vector modulators, and a down-converter mixer. The vector modulators are designed using a modified reflection-type in- and quadrature-phase modulator for amplitude and phase control. At 66 GHz, the measured small-signal gain of LNA is 24 dB with a noise...
A wide locking range injection-locked voltage-controlled oscillator (ILVCO) using 90 nm CMOS process is presented in this paper. The ring-based triple-push topology with bulk injection is employed to extend locking range, and the oscillation condition is also easily maintained over tuning range. The measured overall locking range is from 42 to 71 GHz. The proposed ILVCO has locking ranges of 17%,...
This paper describes a low power high accuracy K-band quadrature voltage controlled oscillator (QVCO) in 90 nm CMOS process. The gate-modulated coupling and the transformer-feedback technique are employed in the QVCO design to enhance performance. With a dc power consumption of 16 mW, the measured tuning range is from 23.4 to 25.1 GHz, and the output power is higher than −5 dBm. The measured phase...
A K-band high conversion gain high efficiency frequency quadrupler using a GaAs E/D-mode pseudomorphic high electron-mobility transistor (PHEMT) technology is presented in this paper. The frequency quadrupler comprises two cascade frequency doublers. The frequency doubler employs a modified common-gate (CG)/common-source (CS) topology to enhance the second harmonic efficiently. The phase-shifter networks...
A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the power amplifier. The measured input locking range is from 91 to 93.7 GHz, and the free-running oscillation...
A miniature 35-110 GHz modified reflection-type BPSK modulator using a 65-nm CMOS process is presented in this paper. The core area of the modulator is only 150 times 370 mum2 due to a compact broadside coupler and a 180deg hybrid used in the BPSK modulator. The BPSK modulator demonstrates a modulation bandwidth of wider than 1 GHz, an error vector magnitude (EVM) of within 10%, a dc offset of better...
In this paper, a 45-GHz quadrature voltage controlled oscillator (QVCO) with a reflection-type IQ modulator in 0.13-mum CMOS technology is presented. An innovative configuration for the QVCO with an IQ modulator is proposed, in which the amplitude and phase errors of QVCO can be accurately evaluated in millimeter-wave (MMW) frequency range. The phase noise of QVCO is better than -99 dBc/Hz at carrier...
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