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A DC-21 GHz low imbalance active balun using a 2 mum InGaP/GaAs HBT process is presented in this letter for high speed data communications. A Darlington cell is adopted to enhance 3 dB bandwidth of the proposed active balun. A feedback capacitor is designed to compensate the phase error between differential output ports caused by the different number of stages. The proposed active balun achieves a...
A broadband stacked power amplifier using 2-mum GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dual-stacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz,...
This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effect so far. Most important is the base capacitor termination of the top transistors.
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