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An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 ??m AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental...
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