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The characteristics of coaxial-annular through-silicon via (CA-TSV) are investigated in microwave field. The analytical models of the reflection coefficient and insertion loss of CA-TSV are developed according to the microwave theory, and are verified by HFSS based on finite element analysis (FEA). And then the insertion loss of CA-TSV is compared with that of cylindrical TSV (C-TSV). It is shown...
In this paper, closed-form expression of the parasitic capacitance of the tapered Through-Silicon Via (TSV) is proposed, which also cover the cylindrical TSV when the slop wall angle is 90°. The comparison between the results of Ansoft Q3D verification and Matlab calculation are made. It shows that the root mean square error is less than 6.10%, over a wide range of the bottom radius and the height...
Characteristic impedance of Through Silicon Via (TSV) differs from the transmission lines' in high speed three-dimensional integrated circuits (3D ICs), resulting in signal reflection and degrading the signal quality. We add a capacitance to the connection of TSV and interconnects to reduce the TSV-induced signal reflection in multilevel interconnect structures for frequencies up to gigascale. Simulation...
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