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In this paper, a high thermal stable TaOx-based RRAM device has been fabricated with TiN as the top electrode. The fabricated device shows good endurance behavior with little fluctuations in voltages and resistance state. Due to the stability of this device, potential for MLC application was also investigated. In addition, the mechanism of the high performance of the device is analyzed with Gibbs...
In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed...
A novel organic memory device based on titanyl phthalocyanine (TiOPc) thin film sandwiched between Aluminum and indium tin oxide electrodes was reported. With a single-component organic material, the device can achieve good performance, such as a high on/off current ratio of 104, a large 4 V read voltage window, and good retention (14,000 s at 1 V stress). The organic memory cell can maintain bistable...
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